Title :
Single event upset characteristics of some digital integrated frequency synthesizers
Author :
Dayaratna, L. ; Seehra, S.S. ; Bogorad, A. ; Ramos, L.G.
Author_Institution :
Lockheed Martin Commun. & Power Center, Newtown, PA, USA
Abstract :
Frequency generation circuits can be designed by using digital integrated circuit frequency synthesizers containing phase locked loops. Many circuits in ECL, Bi-CMOS and CMOS-SOS technology presently exist, making it easier to develop systems with frequencies up to 2.5 GHz and beyond. Single Event Upset (SEU) characteristics of digital frequency synthesizers from National Semiconductor (LMX2315), Peregrine (PE3282A) and Mitel (SP8855 and SP8858) are presented. Depending upon the device technology and manufacturing process, the upset rate can be significant that they may not be suitable for high reliability space applications
Keywords :
BiCMOS digital integrated circuits; CMOS digital integrated circuits; digital phase locked loops; direct digital synthesis; emitter-coupled logic; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); silicon-on-insulator; space vehicle electronics; 2.5 GHz; Bi-CMOS; CMOS-SOS technology; ECL; LMX2315; Mitel; National Semiconductor; PE3282A; Peregrine; SP8855; SP8858; Si-Al2O3; digital frequency synthesizers; digital integrated circuit frequency synthesizers; digital integrated frequency synthesizers; frequency generation circuits; high reliability space applications; phase locked loops; single event upset; single event upset characteristics; upset rate; Aircraft manufacture; CMOS technology; Circuits; Frequency synthesizers; Laser beams; Phase locked loops; Signal generators; Single event upset; Space technology; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1999
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-5660-8
DOI :
10.1109/REDW.1999.816056
