Single event upset characteristics of some digital integrated frequency synthesizers

Author

Dayaratna, L. ; Seehra, S.S. ; Bogorad, A. ; Ramos, L.G.

Author_Institution

Lockheed Martin Commun. & Power Center, Newtown, PA, USA

fYear

1999

fDate

1999

Firstpage

46

Lastpage

52

Abstract

Frequency generation circuits can be designed by using digital integrated circuit frequency synthesizers containing phase locked loops. Many circuits in ECL, Bi-CMOS and CMOS-SOS technology presently exist, making it easier to develop systems with frequencies up to 2.5 GHz and beyond. Single Event Upset (SEU) characteristics of digital frequency synthesizers from National Semiconductor (LMX2315), Peregrine (PE3282A) and Mitel (SP8855 and SP8858) are presented. Depending upon the device technology and manufacturing process, the upset rate can be significant that they may not be suitable for high reliability space applications

Keywords

BiCMOS digital integrated circuits; CMOS digital integrated circuits; digital phase locked loops; direct digital synthesis; emitter-coupled logic; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); silicon-on-insulator; space vehicle electronics; 2.5 GHz; Bi-CMOS; CMOS-SOS technology; ECL; LMX2315; Mitel; National Semiconductor; PE3282A; Peregrine; SP8855; SP8858; Si-Al₂O₃; digital frequency synthesizers; digital integrated circuit frequency synthesizers; digital integrated frequency synthesizers; frequency generation circuits; high reliability space applications; phase locked loops; single event upset; single event upset characteristics; upset rate; Aircraft manufacture; CMOS technology; Circuits; Frequency synthesizers; Laser beams; Phase locked loops; Signal generators; Single event upset; Space technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1999

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-5660-8

Type

conf

DOI

10.1109/REDW.1999.816056

Filename

816056