• DocumentCode
    3468180
  • Title

    A radiation-hardened cold sparing input/output buffer manufactured on a commercial process line

  • Author

    Benedetto, J.M. ; Jordan, A.

  • Author_Institution
    UTMC Microelectron. Syst., Colorado Springs, CO, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    87
  • Lastpage
    91
  • Abstract
    The radiation hardness of a cold sparing buffer manufactured on a commercial process line is demonstrated. The buffer is shown to be resistant to total dose ionizing radiation and immune (>128 MeV-cm 2/mg) to effects from heavy ions such as single event upset (SEU) and single event latch-up (SEL)
  • Keywords
    buffer circuits; ion beam effects; radiation hardening (electronics); cold sparing input/output buffer; commercial manufacture; heavy ion irradiation; radiation hardness; single event latch-up; single event upset; total dose ionizing radiation; Impedance; Ionizing radiation; Manufacturing processes; Microelectronics; Redundancy; Single event upset; Springs; Substrates; Testing; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1999
  • Conference_Location
    Norfolk, VA
  • Print_ISBN
    0-7803-5660-8
  • Type

    conf

  • DOI
    10.1109/REDW.1999.816060
  • Filename
    816060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3468180