The Study on Nanocontact Printing with Ink Aminosilane

Author

Lam, K.Y. ; Chen, Leio L W ; Chen, Henry J H ; Huang, Fon-Shan

Author_Institution

Dept. of Electron. Eng., I-Shou Univ., Kaohsiung

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1077

Lastpage

1079

Abstract

In this paper, a hydrogen silsequioxane (HSQ) stamp fabricated with low e-beam dose was used, and aminosilane was studied as an ink for nanocontact printing on a HSQ/Si substrate at room temperature. In order to find out the optimum conditions for the printing, ink composition, O ₂ plasma intensity, pressing force and pressing time were manipulated. The transferred patterns were examined by the utilization of AFM, SEM and 3M tape. Experimental results demonstrated that the nano-features on the HSQ stamp can be ideally transferred onto the substrate with strong adhesion under moderate O₂ plasma treatment and pressing force

Keywords

atomic force microscopy; masks; nanocontacts; nanopatterning; scanning electron microscopy; 3M tape; AFM; HSQ; SEM; Si/sur; hydrogen silsequioxane stamp; ink aminosilane; nanocontact printing; plasma treatment; Adhesives; Atomic force microscopy; Ink; Lithography; Nanoscale devices; Plasma temperature; Pressing; Printing; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306686

Filename

4098327