Title :
The Study on Nanocontact Printing with Ink Aminosilane
Author :
Lam, K.Y. ; Chen, Leio L W ; Chen, Henry J H ; Huang, Fon-Shan
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung
Abstract :
In this paper, a hydrogen silsequioxane (HSQ) stamp fabricated with low e-beam dose was used, and aminosilane was studied as an ink for nanocontact printing on a HSQ/Si substrate at room temperature. In order to find out the optimum conditions for the printing, ink composition, O 2 plasma intensity, pressing force and pressing time were manipulated. The transferred patterns were examined by the utilization of AFM, SEM and 3M tape. Experimental results demonstrated that the nano-features on the HSQ stamp can be ideally transferred onto the substrate with strong adhesion under moderate O2 plasma treatment and pressing force
Keywords :
atomic force microscopy; masks; nanocontacts; nanopatterning; scanning electron microscopy; 3M tape; AFM; HSQ; SEM; Si/sur; hydrogen silsequioxane stamp; ink aminosilane; nanocontact printing; plasma treatment; Adhesives; Atomic force microscopy; Ink; Lithography; Nanoscale devices; Plasma temperature; Pressing; Printing; Silicon; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306686
