DocumentCode :
3468282
Title :
The irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan
Author :
Saidoh, M. ; Fukuda, M. ; Arakawa, K. ; Tajima, S. ; Sunaga, H. ; Yotsumoto, K. ; Kamiya, T. ; Tanaka, R. ; Hirao, T. ; Nashiyama, I. ; Ohshima, T. ; Itoh, H. ; Okada, S. ; Nemoto, N. ; Kuboyama, S. ; Matsuda, S.
Author_Institution :
JAERI, Ibaraki, Japan
fYear :
1999
fDate :
1999
Firstpage :
117
Lastpage :
122
Abstract :
Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan are described, which cover different radiation qualities, such as gamma-rays, electron beams and ion beams. Among them a stress is put on the facilities for the single-event phenomena (SEP) testing using ion beams with wide LET ranges as well as for the microscopic analysis of SEP using a microbeam of 1 μm diameter
Keywords :
electron beam effects; gamma-ray effects; ion beam effects; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; 1 mum; Japan; electron beams; gamma-rays; ion beams; irradiation facilities; microbeam; microscopic analysis; radiation tolerance testing; semiconductor device; single-event phenomena; space electronics; wide LET ranges; Atomic measurements; Costs; Electron beams; Electronic equipment testing; Ion beams; Semiconductor device reliability; Semiconductor device testing; Semiconductor devices; Space vehicles; System testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 1999
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-5660-8
Type :
conf
DOI :
10.1109/REDW.1999.816066
Filename :
816066
Link To Document :
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