Title :
Analytical modeling of the tunneling current in Schottky barrier carbon nanotube field effect transistor using the Verilog-A language
Author :
Najari, M. ; Frégonèse, S. ; Maneux, C. ; Zimmer, T. ; Mnif, H. ; Masmoudi, N.
Author_Institution :
IMS Lab., Univ. Bordeaux 1, Talence
Abstract :
In this work, we have developed a compact analytical model for the I-V characteristics of tunnel current in a Schottky barrier CNTFET which features the main physical effects governing the operation of this device. The simulation results obtained using this model are in close agreement with numerical calculation results. This model can be implemented with a hardware description language (HDL) language like Verilog- A or VHDL-AMS for portability and standardization.
Keywords :
Schottky barriers; Schottky gate field effect transistors; carbon nanotubes; hardware description languages; nanotube devices; semiconductor device models; tunnel transistors; C; I-V characteristics; Schottky barrier CNTFET; VHDL-AMS; Verilog-A language; analytical modeling; hardware description language; tunneling current; Analytical models; CNTFETs; Hardware design languages; Schottky barriers; Tunneling; One; five; four; three; two;
Conference_Titel :
Systems, Signals and Devices, 2009. SSD '09. 6th International Multi-Conference on
Conference_Location :
Djerba
Print_ISBN :
978-1-4244-4345-1
Electronic_ISBN :
978-1-4244-4346-8
DOI :
10.1109/SSD.2009.4956817
