CMOS 1.5V bandgap voltage reference

Author

Jingwen, Mao ; Tingqian, Chen ; Cheng, Chen ; Junyan, Ren ; Li, Yang

Author_Institution

ASIC & Syst. Skate Key Lab., Fudan Univ., Shanghai

Volume

1

fYear

2005

fDate

24-0 Oct. 2005

Firstpage

469

Lastpage

472

Abstract

A low power and high precision CMOS bandgap voltage reference circuit is presented. Prototype of the circuit is fabricated using the 0.18 mum CMOS process. The power supply is only 1.5 V. It fulfills the first order PTAT (proportion to absolute temperature) temperature curvature compensation with a good PSRR (power supply rejection ratio). The measured results of this circuit show that the PSRR is 47 dB. The output voltage varies from 1.114 V to 1.117 V which is constant within 0.269% over the temperature range of 0~80 degC. The power dissipation is 0.22 mW at 1.5 V and the active area is 0.057 mm²

Keywords

CMOS integrated circuits; energy gap; integrated circuit design; low-power electronics; reference circuits; 0.18 micron; 0.22 mW; 1.114 to 1.117 V; 1.5 V; CMOS bandgap voltage reference; power supply rejection ratio; temperature curvature compensation; Application specific integrated circuits; CMOS process; CMOS technology; Circuit stability; Current density; Low voltage; Photonic band gap; Power supplies; Resistors; Temperature; Bandgap voltage reference; low supply;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2005. ASICON 2005. 6th International Conference On

Conference_Location

Shanghai

Print_ISBN

0-7803-9210-8

Type

conf

DOI

10.1109/ICASIC.2005.1611359

Filename

1611359