Title :
Ultrathin Oxynitride p-MOSFET Recovery Characteristics under NBTI Stress
Author :
He, Yandong ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
The impact of stress and recovery condition on the recovery of an ultrathin oxynitride p-MOSFET under negative-bias temperature instability (NBTI) stress was investigated in this paper. The positive SiO2 bulk trap detrapping and the relaxation of Si/SiO2 interface state was studied through the single point Idlin (drain current) and NFBSILC (near flat-band stress induced leakage current) measurement. The observation of the enhanced relaxation under positive gate bias both in the stress and recovery stages, which play an important role to clarify the existing viewpoint on NBTI recovery characteristics. The different recharging behavior and the substrate voltage dependence reconfirm that the oxide trap relaxation is the major component in NBTI recovery stage
Keywords :
MOSFET; elemental semiconductors; interface states; leakage currents; recovery; relaxation; silicon; silicon compounds; thermal stability; NBTI recovery characteristics; NBTI stress; NFBSILC measurement; Si-SiO2; Si/SiO2 interface state; drain current; near flat-band stress induced leakage current measurement; negative-bias temperature instability stress; oxide trap relaxation; positive SiO2 bulk trap detrapping; positive gate bias; ultrathin oxynitride p-MOSFET recovery; Degradation; Helium; Interface states; MOSFET circuits; Microelectronics; Niobium compounds; Stress measurement; Testing; Threshold voltage; Titanium compounds;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306056
