Ultrathin Oxynitride p-MOSFET Recovery Characteristics under NBTI Stress

Author

He, Yandong ; Xu, Mingzhen ; Tan, Changhua

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1141

Lastpage

1143

Abstract

The impact of stress and recovery condition on the recovery of an ultrathin oxynitride p-MOSFET under negative-bias temperature instability (NBTI) stress was investigated in this paper. The positive SiO₂ bulk trap detrapping and the relaxation of Si/SiO₂ interface state was studied through the single point Idlin (drain current) and NFBSILC (near flat-band stress induced leakage current) measurement. The observation of the enhanced relaxation under positive gate bias both in the stress and recovery stages, which play an important role to clarify the existing viewpoint on NBTI recovery characteristics. The different recharging behavior and the substrate voltage dependence reconfirm that the oxide trap relaxation is the major component in NBTI recovery stage

Keywords

MOSFET; elemental semiconductors; interface states; leakage currents; recovery; relaxation; silicon; silicon compounds; thermal stability; NBTI recovery characteristics; NBTI stress; NFBSILC measurement; Si-SiO₂; Si/SiO₂ interface state; drain current; near flat-band stress induced leakage current measurement; negative-bias temperature instability stress; oxide trap relaxation; positive SiO₂ bulk trap detrapping; positive gate bias; ultrathin oxynitride p-MOSFET recovery; Degradation; Helium; Interface states; MOSFET circuits; Microelectronics; Niobium compounds; Stress measurement; Testing; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306056

Filename

4098347