Title :
An Investigation on the Permanent Component of NBTI Degradation in a 90nm CMOS Technology
Author :
Jin, Lei ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing
Abstract :
The permanent component of NBTI stress induced degradation in pMOSFETs with oxynitride gate dielectrics has been studied experimentally. It is observed that the magnitude of permanent degradation component is determined by the equivalent stress time under a given set of stress conditions, regardless of stress gate voltage interruptions. The permanent component follows a power-law time dependence with a larger exponent factor, compared with the one of apparent (total) degradation. Additionally, the temperature and stress gate voltage dependences of the permanent component are investigated
Keywords :
CMOS integrated circuits; MOSFET; dielectric materials; thermal stability; 90 nm; CMOS technology; NBTI stress induced degradation; oxynitride gate dielectrics; pMOSFET; permanent degradation component; power-law time dependence; stress gate voltage dependences; CMOS technology; Degradation; Dielectric substrates; MOSFETs; Niobium compounds; Residual stresses; Stress measurement; Temperature dependence; Titanium compounds; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306058
