An Investigation on the Permanent Component of NBTI Degradation in a 90nm CMOS Technology

Author

Jin, Lei ; Xu, Mingzhen ; Tan, Changhua

Author_Institution

Dept. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1147

Lastpage

1149

Abstract

The permanent component of NBTI stress induced degradation in pMOSFETs with oxynitride gate dielectrics has been studied experimentally. It is observed that the magnitude of permanent degradation component is determined by the equivalent stress time under a given set of stress conditions, regardless of stress gate voltage interruptions. The permanent component follows a power-law time dependence with a larger exponent factor, compared with the one of apparent (total) degradation. Additionally, the temperature and stress gate voltage dependences of the permanent component are investigated

Keywords

CMOS integrated circuits; MOSFET; dielectric materials; thermal stability; 90 nm; CMOS technology; NBTI stress induced degradation; oxynitride gate dielectrics; pMOSFET; permanent degradation component; power-law time dependence; stress gate voltage dependences; CMOS technology; Degradation; Dielectric substrates; MOSFETs; Niobium compounds; Residual stresses; Stress measurement; Temperature dependence; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306058

Filename

4098349