Title :
Ionizing Irradiation Effect of Fluorine Implanted Metal-BOX-Silicon Structure Based on SOI
Author :
Li, Ning ; Wang, Ning-Juan ; Liu, Zhong-Li ; Zhang, Guo-Qiang ; Zheng, Zhong-Shan ; Lin, Qing ; Zhang, En-Xia ; Lin, Cheng-Lu
Author_Institution :
Inst. of Semicond., CAS, Beijing
Abstract :
Ionizing irradiation effects on MBS (metal-BOX-silicon) have been studied in this paper. Through pre- and post-irradiation high-frequency (HF) C-V curves of MBS of several samples in which fluorine was implanted into BOX of SIMOX, it was found that PD fluoridated SIMOX is beneficial to harden buried oxide layer
Keywords :
SIMOX; buried layers; fluorine; ion implantation; radiation hardening (electronics); F; SIMOX; SOI; buried oxide layer; fluorine implantation; high-frequency C-V curves; ionizing irradiation effect; metal-BOX-silicon structure; Annealing; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Content addressable storage; Hafnium; Interface states; Laboratories; Transducers; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306060
