Title :
Investigation of Gate-Induced Drain Leakage Current in Ultra-thin Gate Oxide LDD nMOSFET´s
Author :
Chen, Haifeng ; Hao, Yue ; Zhu, Zhiwei ; Ma, Xiaohua ; Cao, Yanrong
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an
Abstract :
The gate-induced drain leakage current (GIDL) current is investigated in LDD nMOSFET´s. It is shown that under constant drain-to-gate voltage (VDG) the difference between ID in the off-state ID-VG characteristics and the corresponding one in the off-state ID-VD characteristics, which is defined as DIFF, versus VDG shows a peak. Moreover, the natural logarithm of the maximum D IFF (DIFF, MAX) varies linearly with V DG. The DIFF, MAX-VDG curves of different thickness gate oxide(4nm and 1.4nm) are presented. Moreover, it is found that DIFF curve shifts upwards with increasing temperature
Keywords :
MOSFET; leakage currents; 1.4 nm; 4 nm; LDD nMOSFET; drain-to-gate voltage; gate-induced drain leakage current; ultra-thin gate oxide; CMOS technology; EPROM; Flash memory cells; Leakage current; MOSFET circuits; Microelectronics; Random access memory; Temperature; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306062
