Title :
An on-chip monitoring circuit for NBTI
Author :
Xin, Wei-Ping ; Zhuang, Yi-Qi ; Li, Xiao-Ming
Author_Institution :
Dept. of Microelectron., Xidian Univ., Xi´´an
Abstract :
A measurement circuit is proposed as an early-warning sentinel of an upcoming threshold voltage failure condition due to negative-bias temperature instability (NBTI) degradation mechanisms in this paper, which can be integrated with other circuits or devices in a standard CMOS process technology
Keywords :
CMOS integrated circuits; integrated circuit measurement; thermal stability; CMOS process technology; NBTI; degradation mechanisms; measurement circuit; negative-bias temperature instability; on-chip monitoring circuit; CMOS process; CMOS technology; Condition monitoring; Degradation; Integrated circuit measurements; Measurement standards; Niobium compounds; Temperature; Threshold voltage; Titanium compounds;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306064
