Direct measurement of localized joule heating in silicon devices by means of newly developed high resolution IR microscopy

Author

Yasuda, Atsumi ; Yamaguchi, Hizuru ; Tanabe, Yoshikazu ; Owada, Nobuo ; Hirasawa, Shigeki

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1991

fDate

9-11 April 1991

Firstpage

245

Lastpage

249

Abstract

A high resolution IR microscope, especially designed for measuring localized joule heating effect in silicon devices, has been developed by combining a ZnS objective lens and a HgCdTe infrared detector. This microscope has achieved the practical spatial resolution of 10 mu m and practical temperature resolution of 0.24 K. With this IR microscope, the joule heating effect in poly-Si (polycrystalline silicon) thin film resistors formed on SiO/sub 2/ thin layer has been measured, simulating SOI (silicon on insulator) structures. A significant temperature rise was observed in this device structure, because of the low thermal conductivity of the SiO/sub 2/ layer, suggesting the possibility of new reliability problems caused by the joule heating effect in SOI structures.<>

Keywords

infrared detectors; infrared imaging; optical microscopes; optical microscopy; semiconductor device testing; temperature measurement; HgCdTe infrared detector; SOI structures; Si devices; SiO/sub 2/; ZnS objective lens; high resolution IR microscopy; localized joule heating; polysilicon; reliability problems; thin film resistors; Infrared heating; Lenses; Microscopy; Optical design; Silicon devices; Silicon on insulator technology; Spatial resolution; Temperature; Thermal conductivity; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1991, 29th Annual Proceedings., International

Conference_Location

Las Vegas, NV, USA

Print_ISBN

0-87942-680-2

Type

conf

DOI

10.1109/RELPHY.1991.146022

Filename

146022