Title :
TCAD for Next Generation Technology and Product Development
Author :
Kong, Jeong-Taek ; Lee, Won-Sok ; Lee, Keun-Ho ; Park, Young-Kwan
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung
Abstract :
As the lithography-driven scaling has been replaced by physically-based scaling, TCAD has become a principal tool for virtual characterization of technology development. This paper describes roles, benefits, capabilities and perspectives of TCAD applications for technology and product development. Emerging challenges in the nanotechnology era are also discussed
Keywords :
product development; technology CAD (electronics); TCAD; next generation technology; product development; virtual characterization; Compressive stress; Computer aided engineering; Costs; Electric variables; Electronics industry; High-K gate dielectrics; Lead compounds; Nanotechnology; Product development; Research and development;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306072
