• DocumentCode
    3468886
  • Title

    TCAD for Next Generation Technology and Product Development

  • Author

    Kong, Jeong-Taek ; Lee, Won-Sok ; Lee, Keun-Ho ; Park, Young-Kwan

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    1189
  • Lastpage
    1192
  • Abstract
    As the lithography-driven scaling has been replaced by physically-based scaling, TCAD has become a principal tool for virtual characterization of technology development. This paper describes roles, benefits, capabilities and perspectives of TCAD applications for technology and product development. Emerging challenges in the nanotechnology era are also discussed
  • Keywords
    product development; technology CAD (electronics); TCAD; next generation technology; product development; virtual characterization; Compressive stress; Computer aided engineering; Costs; Electric variables; Electronics industry; High-K gate dielectrics; Lead compounds; Nanotechnology; Product development; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306072
  • Filename
    4098363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3468886