Title :
Implementin spatial variation of impurity concentration in MOS transistor modeling
Author :
Jie, Bin B. ; Sah, Chih-Tang
Author_Institution :
Florida Univ., Gainesville, FL
Abstract :
Analytical solution, numerical algorithms and computed curves of D. C. current-voltage characteristics are reported for MOS transistors with spatially varying impurity concentration profile in the basewell-channel region. The second generation industrial-consensus surface-potential approach is used. A family of analytical impurity concentration profiles is studied, including the exponential and Gaussian U-shaped, M-shaped, and L-shaped profiles. The current-voltage characteristics, especially in the subthreshold range, are influenced by the remote electric potential boundary conditions, including the basewell-body contact location, geometry and barrier type, and voltage
Keywords :
MOSFET; doping profiles; function approximation; impurity distribution; semiconductor device models; DC current-voltage characteristics; Gaussian U-shaped profiles; L-shaped profiles; M-shaped profile; MOS transistor modeling; basewell-channel region; exponential profile; impurity concentration profiles; numerical algorithms; remote electric potential boundary conditions; surface-potential approach; Algorithm design and analysis; Analytical models; Computational modeling; Current-voltage characteristics; Equations; Geometry; Impurities; MOSFETs; Solid modeling; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306100
