Title :
Drain Current and Transconductance Model for the Undoped Body Asymmetric Double-Gate MOSFET
Author :
Ortiz-Conde, Adelmo ; Sánchez, Francisco J Garcia ; Malobabic, Slavica ; Muci, Juan ; Salazar, Ramón
Author_Institution :
Solid State Electron. Lab., Univ. Simon Bolivar, Caracas
Abstract :
A surface potential-based drain current and transconductance model for undoped-body asymmetric double-gate MOSFETs are presented. They are built on the basis of the front and back surface potentials and a charge coupling variable evaluated at the source and drain ends. The model consists of single analytic equations which are valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. Its validity has been verified by comparison to numerical simulations
Keywords :
MOSFET; charge-coupled devices; surface potential; charge coupling variable; surface potential-based drain current; transconductance model; undoped body asymmetric double-gate MOSFET; Equations; Laboratories; MOSFET circuits; Nanoscale devices; Numerical simulation; Silicon; Solid modeling; Solid state circuits; Transconductance; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306103
