Title :
Adjacent Device Thermal Effects Modeling and Characterization in Dielectrically Isolated Bipolar Technology
Author :
Hossain, Md M. ; Kim, Daewoo ; Chaugule, Abhijit ; Davis, W. Alan ; Russell, Howard T., Jr. ; Carter, Ronald L.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX
Abstract :
This paper presents a novel procedure for modeling adjacent device heating effects (thermal coupling) of dielectrically isolated bipolar junction transistors. A new thermal model has been developed for the thermal coupling of multiple devices in an integrated circuit. It also considers the different spacings between adjacent devices. A proposed measurement technique can be used to find the self-heating thermal resistance and thermal coupling resistance for that circuit. Theory, simulations and measurement results agree with the modeling techniques described in this paper. The circuits have been realized using the vertical bipolar inter-company (VBIC) model of dielectrically isolated bipolar junction transistors (DIBJT)
Keywords :
bipolar transistors; isolation technology; semiconductor device models; thermal conductivity; thermal resistance; adjacent device thermal effects modeling; analog integrated circuits; dielectrically isolated bipolar technology; electrothermal simulation; self-heating thermal resistance; temperature measurement; thermal coupling resistance; thermal power generation; vertical bipolar inter-company model; Circuit simulation; Coupling circuits; Dielectric devices; Dielectric measurements; Heating; Integrated circuit modeling; Integrated circuit technology; Isolation technology; Measurement techniques; Thermal resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306107
