DocumentCode
3469100
Title
Circuit Enablement for SiGe BiCMOS and RFCMOS Technologies
Author
Wang, X. ; Chen, Y. ; Sweeney, S. ; Lee, J. ; Anna, R. ; Pekarik, J. ; Sanderson, D. ; Wang, D.
Author_Institution
IBM Semicond. R&D Center, Essex Junction, VT
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1260
Lastpage
1263
Abstract
This paper reviews the circuit enablement activity conducted inside IBM´s SiGe BiCMOS and RFCMOS technology enablement group. Examples of circuit designs are given. Model/hardware correlations on DC, AC, noise and nonlinearity performance are used to evaluate the BSIM3V3 modeling accuracy. Benchmark circuit example of a VCO is given to demonstrate the technology capabilities which can be used as a reference circuit for customer training, technical support or customer design references
Keywords
BiCMOS integrated circuits; Ge-Si alloys; BiCMOS; RFCMOS; SiGe; benchmark circuit; circuit enablement; reference circuit; BiCMOS integrated circuits; Circuit simulation; Circuit synthesis; Circuit testing; Costs; FETs; Germanium silicon alloys; Hardware; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306108
Filename
4098377
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