Title :
Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications
Author :
Ezaki, T. ; Warabino, T. ; Miyake, M. ; Sadachika, N. ; Navarro, D. ; Mattausch, H.J. ; Miura-Mattausch, M. ; Ohguro, T. ; Iizuka, T. ; Taguchi, M. ; Kumashiro, S. ; Miyamoto, S.
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ.
Abstract :
We have developed MOSFETs noise models for the 1/f, thermal and induced-gate noise based on self-consistent surface-potential description. Consideration of non-uniform mobility and carrier distributions arising from the surface potential distribution along the channel is indispensable for accurate noise modeling for RF applications. The developed noise models are implemented in the complete surface-potential based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model) for circuit simulations
Keywords :
MOSFET; semiconductor device noise; RF applications; advanced MOSFET; carrier distributions; circuit simulations; noise modeling; nonuniform mobility; self-consistent surface-potential description; Circuit noise; Circuit simulation; Low-frequency noise; MOSFETs; Noise figure; Noise generators; Radio frequency; Semiconductor device noise; Solid modeling; Surface fitting;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306109
