• DocumentCode
    3469153
  • Title

    A Compact Quantum-Mechanical Model for Double-Gate MOSFET

  • Author

    Lin, Chung-Hsun ; Dunga, Mohan V. ; Niknejad, Ali M. ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    1272
  • Lastpage
    1274
  • Abstract
    A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2D simulation results well. This indicates that both Vth shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted simultaneously. The model can predict the complicated QM effect dependence on various device parameters, such as Nbody, Tsi, Tox, etc
  • Keywords
    MOSFET; quantum theory; surface potential; compact quantum-mechanical model; double-gate MOSFET; gate capacitance degradation; strong inversion region; surface potential calculation; Capacitance; Carrier confinement; Degradation; Dielectric substrates; Doping; MOSFET circuits; Poisson equations; Predictive models; Quantization; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306111
  • Filename
    4098380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3469153