NQS effects on MOSFET´s terminal currents

Channel segments approach is used to investigate NQS (non-quasi-static) effect on MOSFET´s behavior. For the first time, NQS effect on terminal currents is examined in addition to channel charge. It is demonstrated that conventional analysis and modeling approach for NQS effect, which only takes into consideration the NQS effect on channel charge, is not sufficient. Both channel charge variation and terminal current variation under NQS working mode need to be included in NQS models for accurate prediction of device behavior. It is found that NQS effect is more significant in saturation region than that in linear region