DocumentCode
3469189
Title
Closed-form Model of Barrier Height in Bulk MOSFET Including 2D Effects and Electron Statistics
Author
Weidemann, Michaela ; Jung, Melanie ; Kloes, Alexander
Author_Institution
Univ. of Appl. Sci. Giessen-Friedberg, Giessen
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1278
Lastpage
1280
Abstract
Design of complex systems relies on accurate compact models for circuit simulation. In nanoscale MOS devices a model for the potential barrier limiting the channel current is required. In this paper a closed-form analytical model for 2D effects on the barrier is derived. This model is very close to device physics, without including numerical fitting parameters
Keywords
MOSFET; semiconductor device models; 2D effects; barrier height; bulk MOSFET; closed form analytical model; electron statistics; Analytical models; Circuit simulation; Conformal mapping; Electrons; Laplace equations; MOS devices; MOSFET circuits; Nanoscale devices; Poisson equations; Statistics;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306113
Filename
4098382
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