Title :
Temperature Characteristics for Threshold Voltage of HV LDMOS
Author :
Gao, Shan ; Chen, Junning ; Ke, Daoming ; Liu, Qi
Author_Institution :
Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
The temperature characteristics (at -27degC-300degC) on high voltage power LDMOS are discussed, and a calculation formula of threshold voltage´s temperature coefficient is given in this paper. Computing results show that the threshold voltage temperature coefficient of a high voltage power LDMOS is a constant in a wide range of temperature, a linear expression can be used to describe its temperature characteristics, and the threshold voltage temperature coefficient can be decreased by thin gate oxide film and high channel doping concentration
Keywords :
power MOSFET; semiconductor doping; high channel doping concentration; high voltage power LDMOS; linear expression; temperature characteristics; temperature coefficient; thin gate oxide film; threshold voltage; Differential equations; Doping; Heating; MOS devices; MOSFETs; Medical simulation; Photonic band gap; Temperature dependence; Temperature distribution; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306115
