T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

A novel partially-depleted (PD) silicon-on-insulator (SOI) MOSFET with a T-shaped body (TSB) is proposed for the first time. Simulation results demonstrate that the proposed structure provides nano-scaled PD SOI devices with much better short channel effect immunity and sub-threshold characteristics than those of UTB SOI devices. It is also shown that the threshold voltage of proposed device can be adjusted over a wide range by changing the thickness of the low-doped channel region if a step-function channel doping profile is used. At the same time, the short channel effects of the TSB devices exhibit a week dependence on the channel thickness variation