Title :
Model-Adaptable MOSFET Parameter Extraction With A Hybrid Genetic Algorithm
Author :
Wu, Tao ; Li, Dingyu ; Liu, Xiaoyan ; Du, Gang ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this paper, a novel method based on hybrid genetic algorithm (GA) was developed to extract parameters of analytical or part-analytical models. It needn´t complex computation compared with conventional methods or other compound genetic algorithm. With a simple input file and opening model codes, it was easy to be modified for other models. Using this method, parameters of BSIMPD MOSFET threshold voltage were extracted, the simulation result with this method agrees well with the experimental result
Keywords :
MOSFET; genetic algorithms; semiconductor device models; BSIMPD; MOSFET; hybrid genetic algorithm; parameter extraction; Algorithm design and analysis; Analytical models; Data mining; Genetic algorithms; Genetic mutations; Hybrid power systems; MOSFET circuits; Microelectronics; Optimization methods; Parameter extraction;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306141
