Title :
Low noise operational amplifier design with current driving bulk in 0.25μm CMOS technology
Author :
Li, Zhiyuan ; Ma, Jianguo ; Yu, Mingyan ; Ye, Yizheng
Author_Institution :
Microelectron. Center, Harbin Inst. of Technol., China
Abstract :
This paper discusses the effect of substrate biasing on equivalent input referred voltage noise En, and presents a low noise operational amplifier design with current driving bulk technology. The operational amplifier with reversed substrate biasing by current driving bulk technology is realized in TSMC 0.25μm CMOS process, and achieves better noise performance. Simulated performance is that the operational amplifier can obtain equivalent input referred voltage noise En = 2.91 μV√Hz/ @ 1 Hz, En = 3.38 μV√Hz/ @ 1 MHz GBW product 280.5 MHz, DC gain 16dB, total harmonic distortion (THD) -76dB@50kHz. Power consumption is 2.35mW under a 2.5V power supply.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low noise amplifiers; operational amplifiers; 0.25 micron; 1 Hz; 1 MHz; 2.35 mW; 2.5 V; 76 dB; CMOS technology; current driving bulk technology; equivalent input referred voltage noise; low noise amplifier; operational amplifier; substrate biasing; 1f noise; CMOS process; CMOS technology; Circuit noise; Integrated circuit technology; Low-frequency noise; Low-noise amplifiers; MOSFETs; Operational amplifiers; Voltage;
Conference_Titel :
ASIC, 2005. ASICON 2005. 6th International Conference On
Print_ISBN :
0-7803-9210-8
DOI :
10.1109/ICASIC.2005.1611407
