Title :
The Impact of Device Structure and Quantum Mechanics on Effective E-Field in Ultra-thin Body and Double-gate SOI MOSFETs
Author :
Man, Tsz Yin ; Wu, Wen ; Chan, Mansun
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
Abstract :
Mobility bias-dependence is usually modeled by the effective electric field (Eeff). However, the influence of different device structures and quantum effect on the Eeff has not been thoroughly studied. In this paper, the Eeff in ultra-thin body (UTB) and double-gate (DG) MOSFETs is derived from the Poisson equation. Based on the Eeff, symmetric DG devices show higher mobility than asymmetric DG and UTB devices. Extensive simulations also show the quantum effect has no influence on the Eeff, from which the effective mobility (mueff) modeling with quantum consideration can be greatly simplified
Keywords :
MOSFET; Poisson equation; carrier mobility; quantum theory; silicon-on-insulator; Poisson equation; device structure; double-gate SOI MOSFET; effective electric field; mobility bias-dependence; mobility modeling; quantum mechanics; ultra-thin body MOSFET; Conductivity; Electron mobility; Electrostatics; MOSFET circuits; Phonons; Poisson equations; Quantum computing; Quantum mechanics; Semiconductor films; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306144
