Title :
Modeling of Geometry-Induced RF Characteristics of Double-Gate MOSFETs
Author :
Wu, Wen ; Chan, Mansun
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
Abstract :
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. Parasitic gate capacitances and gate resistances, associated with the geometry of DG MOSFETs, are investigated in detail. The model is verified by physical device simulation. Furthermore, the behavior of devices in the RF domain, including frequency responses and high-frequency noise performance, are predicted
Keywords :
MOSFET; noise; semiconductor device models; RF domain; double-gate MOSFET; frequency response; gate resistance; geometry-induced radio frequency characteristics; high-frequency characteristics; high-frequency noise performance; parasitic gate capacitances; Cutoff frequency; Gaussian processes; Geometry; Immune system; MOSFETs; Parasitic capacitance; Radio frequency; Roentgenium; Silicon; Solid modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306145
