DocumentCode
3469399
Title
Modeling of Geometry-Induced RF Characteristics of Double-Gate MOSFETs
Author
Wu, Wen ; Chan, Mansun
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1312
Lastpage
1314
Abstract
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. Parasitic gate capacitances and gate resistances, associated with the geometry of DG MOSFETs, are investigated in detail. The model is verified by physical device simulation. Furthermore, the behavior of devices in the RF domain, including frequency responses and high-frequency noise performance, are predicted
Keywords
MOSFET; noise; semiconductor device models; RF domain; double-gate MOSFET; frequency response; gate resistance; geometry-induced radio frequency characteristics; high-frequency characteristics; high-frequency noise performance; parasitic gate capacitances; Cutoff frequency; Gaussian processes; Geometry; Immune system; MOSFETs; Parasitic capacitance; Radio frequency; Roentgenium; Silicon; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306145
Filename
4098393
Link To Document