Coulomb Scattering induced mobility degradation in Ultrathin-body SOI MOSFETs with high-k gate stack

Author

Yang, J.F. ; Xia, Z.L. ; Du, G. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F.

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1315

Lastpage

1317

Abstract

The mobility degradation in ultrathin-body (UTB) SOI MOSFETs with high-k gate stack induced by Coulomb scattering rates is studied. The Coulomb scattering limited electron mobility for different gate dielectric materials and different silicon body thickness are calculated based on Coulomb scattering theories. The results show that increasing the dielectric constant of high-k gate dielectrics and decreasing the Si body thickness of UTB SOI may suppress the mobility degradation caused by Coulomb scattering. Related explanations on the phenomenon are proposed

Keywords

MOSFET; dielectric materials; electron mobility; silicon-on-insulator; Coulomb scattering; body thickness; electron mobility; gate dielectric materials; high-k gate stack; mobility degradation; ultrathin-body SOI MOSFET; Degradation; Electron mobility; Equations; High K dielectric materials; High-K gate dielectrics; MOSFETs; Microelectronics; Permittivity; Scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306146

Filename

4098394