A current sensing circuit for IDDQ testing

Author

Kim, Tae Sang ; Hong, Seung Ho ; Kim, Jeong Beom

Author_Institution

Dept. of Electron. Eng., Kangwon Nat. Univ., South Korea

Volume

2

fYear

2005

fDate

24-27 Oct. 2005

Firstpage

666

Lastpage

669

Abstract

This paper presents a new built-in current sensor (BICS) that detects defects using the current testing technique in CMOS integrated circuits. This circuit employs cross-coupled PMOS transistor, it is used as a current comparator. The proposed circuit is a negligible impact on the performance of the circuit under test (CUT). In addition, no extra power dissipation and high-speed fault detection are achieved. It can be applicable deep sub-micron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The entire area of the test chip is 116×65 μm². The BICS occupies only 41×17 μm² of area in the test chip. The area overhead of the BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix 0.35 μm 2-poly 4-metal standard CMOS technology.

Keywords

CMOS integrated circuits; built-in self test; electric sensing devices; integrated circuit testing; 0.35 micron; CMOS integrated circuits; HSPICE simulation; IDDQ testing; built-in current sensor; circuit under test; cross-coupled PMOS transistor; current comparator; current sensing circuit; current testing technique; deep sub-micron process; defect detection; high-speed fault detection; CMOS technology; Circuit testing; Current supplies; Electrical fault detection; Electronic equipment testing; Integrated circuit testing; Logic testing; Power dissipation; Power supplies; Very large scale integration; BICS; Current Testing; IDDQ; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2005. ASICON 2005. 6th International Conference On

Print_ISBN

0-7803-9210-8

Type

conf

DOI

10.1109/ICASIC.2005.1611411

Filename

1611411