DocumentCode :
3469449
Title :
Using patent data to analyze the development of the next generation of solar cells
Author :
Tseng, FangMei ; Chu, YiWei ; Peng, YaNi
Author_Institution :
Int. Bus. Dept., Yuan Ze Univ., Taoyuan, Taiwan
fYear :
2009
fDate :
2-6 Aug. 2009
Firstpage :
3064
Lastpage :
3072
Abstract :
With the shortage of raw materials for the production of crystalline silicon solar cells, the next generation of solar cells has reached the perfect stage for development. While in the past researchers have laid emphasis on the development of crystalline silicon solar cells, the application of the next generation of crystalline silicon solar cells is different. Among the thin film solar cells, the most widely-recognized is the a-Si thin film solar cell with the greatest potential to be developed and many manufacturers have already invested in R&D. In this study, we employ the patent portfolio proposed by Ernst to embark on the analysis of technology development regarding the a-Si thin film solar cell and find that the major technology field has reached the mature stage in the technology life cycle; moreover, four patent strategic clusters are obtained. The results regarding the company level and technology level of the clusters are integrated with the profile data and the development focus to realize the patent performance, technology capacity and R&D background concerning the technological fields of the a-Si thin film solar cell and to propose patent strategies to companies.
Keywords :
patents; research and development; solar cells; R and D; crystalline silicon solar cells; patent data; patent portfolio; thin film solar cells; Crystallization; Data analysis; Fossil fuels; Information analysis; Photovoltaic cells; Portfolios; Research and development; Silicon; Solar power generation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Management of Engineering & Technology, 2009. PICMET 2009. Portland International Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-890843-20-5
Electronic_ISBN :
978-1-890843-20-5
Type :
conf
DOI :
10.1109/PICMET.2009.5261755
Filename :
5261755
Link To Document :
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