DocumentCode
3469451
Title
Polysilicon Gate Quantum Effect Model for nanoscale MOSFET´s
Author
Dai, Yue-Hua ; Chen, Jun-ning ; Ke, Dao-ming ; Hu, Yuan
Author_Institution
Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1321
Lastpage
1323
Abstract
A novel polysilicon gate quantum effect model for MOSFET devices is presented. Only two fitting parameters are required to account for the polysilicon gate quantum effects. It is shown that neglecting the polysilicon gate quantum effects for nanoscale MOSFETs may lead to a lager error in gate capacitance. Comparing with the Medici simulated results validates the model
Keywords
MOSFET; capacitance; nanoelectronics; semiconductor device models; curve fit; gate capacitance error; least squares; nanoscale MOSFET; polysilicon gate quantum effect; Doping; Electrodes; Equations; MOSFET circuits; Medical simulation; Nanoscale devices; Numerical simulation; Quantum capacitance; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306148
Filename
4098396
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