Title :
Polysilicon Gate Quantum Effect Model for nanoscale MOSFET´s
Author :
Dai, Yue-Hua ; Chen, Jun-ning ; Ke, Dao-ming ; Hu, Yuan
Author_Institution :
Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
A novel polysilicon gate quantum effect model for MOSFET devices is presented. Only two fitting parameters are required to account for the polysilicon gate quantum effects. It is shown that neglecting the polysilicon gate quantum effects for nanoscale MOSFETs may lead to a lager error in gate capacitance. Comparing with the Medici simulated results validates the model
Keywords :
MOSFET; capacitance; nanoelectronics; semiconductor device models; curve fit; gate capacitance error; least squares; nanoscale MOSFET; polysilicon gate quantum effect; Doping; Electrodes; Equations; MOSFET circuits; Medical simulation; Nanoscale devices; Numerical simulation; Quantum capacitance; Semiconductor process modeling; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306148
