The analysis and modeling of on-resistance in high-voltage LDMOS

Author

Jian-Meng ; Shan-Gao ; Jun-Ning Chen ; Dao-Ming Ke

Author_Institution

Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1327

Lastpage

1329

Abstract

An analytical method is proposed in order to compute the on-resistance in high-voltage power device LDMOS with structure of deep n-well and fried plate. With the equivalent series circuit of LDMOS resistance presented, by considering the exponential doping distribution in channel, the channel current equation is modified in this paper. In drift region, the resistance is divided into four components due to doping profiles, current performance and device geometries. Finally, the paper deduced analytic on-resistance expression of LDMOS which agrees with the result obtained from two-dimensional simulation

Keywords

electric resistance; equivalent circuits; power MOSFET; power semiconductor devices; semiconductor device models; semiconductor doping; 2D simulation; LDMOS resistance; deep n-well structure; equivalent series circuit; exponential doping distribution; fried plate; high-voltage LDMOS; on resistance; two-dimensional simulation; Analytical models; Differential equations; Doping profiles; Equivalent circuits; Geometry; Integrated circuit modeling; Numerical models; Region 3; Scattering; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306150

Filename

4098398