Title :
Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics
Author :
Chen, Zheng ; Boroyevich, Dushan ; Burgos, Rolando
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results obtained, a guideline has been established for the layout and design of high-speed switching circuits.
Keywords :
electromagnetic interference; field effect transistor switches; inductance; network synthesis; MOSFET switching waveforms characteristics; common source inductance; device stress; electromagnetic interference; gate loop inductance; high speed switching circuit design; parasitic inductance; stray inductance; switching loop inductance; switching loss; waveform ringing; Electromagnetic interference; Inductance; Inductors; MOSFET circuits; Packaging; Parametric study; Power MOSFET; Stress; Switching circuits; Switching loss; Power MOSFET; parametric study; parasitic inductance; switching characteristics;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5543851
