Efficient Parameter Extraction Scheme in Ultra-Thin Gate Dielectric MOS Capacitor with Considerable Gate Leakage

Presented herein is a fast but accurate quantum C-V simulation, capable of extracting effective oxide thickness and other parameters based strictly on C-V data alone. The apparent C-V degradation in leaky dielectric MOSFETs is shown mitigated in sub-micrometer channel length device because of the diminished channel resistance and gate leakage