DocumentCode
3469632
Title
Power device consideration on high power PFC pre-regulator for optimized design
Author
Kang, Wonseok ; Young, Sungmo ; Ahn, Taeyoung ; Chang, Seonggi
Author_Institution
Security R&D Lab., LG Electron., Pyungtaik, South Korea
fYear
2010
fDate
21-24 June 2010
Firstpage
187
Lastpage
190
Abstract
A latest super-junction MOSFET is applied to hard switching, high power PFC application and compared to soft switched IGBT. With reduced on-resistance and enhanced switching characteristics, the super-junction MOSFET can compete with soft switched IGBT. A 1.5kW rated CCM PFC circuit is designed and ZVS logic has implemented for performance evaluation of both configurations. Limit line of power rating is discussed through analyzing switching and conduction losses.
Keywords
MOSFET; insulated gate bipolar transistors; power factor correction; zero voltage switching; ZVS logic; continuous current mode power factor correction; high power PFC preregulator; power 1.5 kW; power device consideration; soft switched IGBT; super-junction MOSFET; Current density; Design optimization; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power semiconductor switches; Power system security; Schottky diodes; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference (IPEC), 2010 International
Conference_Location
Sapporo
Print_ISBN
978-1-4244-5394-8
Type
conf
DOI
10.1109/IPEC.2010.5543857
Filename
5543857
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