DocumentCode
3469644
Title
Body current model for Drift Drain Mosfet
Author
Bolin, Shuai ; Ziou, Wang ; Xiaojin, Guan
Author_Institution
Dept. of Microelectron., Soochow Univ., Suzhou
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1355
Lastpage
1357
Abstract
In this paper, characteristics of drift drain MOSFET are simulated and analysed with the device simulation software Medici. Electric field model for drift region is proposed and body current model is obtained
Keywords
MOSFET; electric fields; semiconductor device models; Medici; body current model; device simulation; drift drain MOSFET; drift region; electric field model; Analytical models; CMOS technology; Circuit simulation; Doping; Electron mobility; MOSFET circuits; Medical simulation; Neodymium; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306159
Filename
4098407
Link To Document