Title :
Body current model for Drift Drain Mosfet
Author :
Bolin, Shuai ; Ziou, Wang ; Xiaojin, Guan
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou
Abstract :
In this paper, characteristics of drift drain MOSFET are simulated and analysed with the device simulation software Medici. Electric field model for drift region is proposed and body current model is obtained
Keywords :
MOSFET; electric fields; semiconductor device models; Medici; body current model; device simulation; drift drain MOSFET; drift region; electric field model; Analytical models; CMOS technology; Circuit simulation; Doping; Electron mobility; MOSFET circuits; Medical simulation; Neodymium; Semiconductor device modeling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306159
