DocumentCode :
3469656
Title :
Performance and characterization of a 20 kV, contact face illuminated, silicon carbide photoconductive semiconductor switch for pulsed power applications
Author :
Mauch, D. ; Sullivan, W. ; Bullick, A. ; Neuber, A. ; Dickens, J.
Author_Institution :
Center for Pulsed Power & Power Electron., Texas Tech Univ., Lubbock, TX, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1
Lastpage :
3
Abstract :
A 20 kV, lateral geometry, contact face illuminated, silicon carbide (SiC) photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS was fabricated from high purity semi-insulating, bulk 4H-SiC (12.7 mm × 12.7 mm × 0.35 mm), in a lateral geometry, with both the anode and cathode contacts located on the same face of the device. The device was illuminated with light from a tripled Nd:YAG laser (355 nm-7 ns FWHM) entering from the contact face. The device demonstrated sub-ohm on-state resistance for laser pulse energies in the mJ range, and micro-ampere leakage currents at 20 kVdc in the off-state. Voltage hold-off and low leakage currents in the off state were achieved through high energy electron beam irradiation of the bulk material. The switch´s geometry and packaging are discussed, along with experimental switching and blocking characteristics.
Keywords :
leakage currents; photoconducting switches; power semiconductor switches; pulsed power switches; silicon compounds; wide band gap semiconductors; SiC; anode contact; blocking characteristics; cathode contact; contact face illuminated photoconductive semiconductor switch; high-energy electron beam irradiation; high-purity semiinsulating bulk 4H-SiC; laser pulse energies; lateral geometry; low-leakage current; microampere leakage currents; pulsed power application; silicon carbide PCSS; silicon carbide photoconductive semiconductor switch; subohm on-state resistance; switch geometry; voltage 20 kV; voltage hold-off; Contacts; Geometry; Lasers; Materials; Optical switches; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference (PPC), 2013 19th IEEE
Conference_Location :
San Francisco, CA
ISSN :
2158-4915
Type :
conf
DOI :
10.1109/PPC.2013.6627635
Filename :
6627635
Link To Document :
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