Title :
Active gate control for high power IGBTs with separated gains
Author :
Ming, Li ; Yue, Wang ; Xiong, Fang ; Leqiang, Zhang ; Zhaoan, Wang
Author_Institution :
Xi´´an jiaotong Univ., Xi´´an, China
Abstract :
A novel active gate drive method for high power IGBTs is proposed in this paper. It makes use of 2 simple capacitors and several Transient Voltage Suppressors (TVS) to gain different feedback gains in different turn-off transient period, in order to suppress the turn-off over voltage and control turn-off voltage rise slope. Comprehensive study among several application oriented methods is carried out to show its advantages by Saber simulator. With consideration of device safety, an evaluation criterion for active gate drive circuit is proposed.
Keywords :
driver circuits; insulated gate bipolar transistors; power semiconductor devices; transients; active gate control; active gate drive method; feedback gains; high power IGBT; separated gains; transient voltage suppressors; Automatic voltage control; Capacitors; Circuit simulation; Diodes; Inductance; Insulated gate bipolar transistors; Power electronics; Power semiconductor switches; Safety devices; Voltage control; Active Gate Control; IGBT; Turn-off Voltage overshooting;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5543859
