Title :
Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization
Author :
Bilbao, Argenis ; Ray, William B. ; Schrock, James A. ; Lawson, Kevin ; Bayne, Stephen B. ; Lin Cheng ; Agarwal, Anant K. ; Scozzie, Charles
Author_Institution :
Electr. & Comput. Eng. Dept., Texas Tech Univ., Lubbock, TX, USA
Abstract :
The purpose of this research is to characterize and compare CREE´s new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE´s previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.
Keywords :
hydrogenation; power MOSFET; pulsed power technology; silicon compounds; wide band gap semiconductors; MOSFET design; N-channel silicon carbide vertical power D-MOSFET; SiC; device characterization; pulsed current handling capability; pulsed power switching; Degradation; Logic gates; MOSFET; Resistance; Silicon carbide; Switches; Testing;
Conference_Titel :
Pulsed Power Conference (PPC), 2013 19th IEEE
Conference_Location :
San Francisco, CA
DOI :
10.1109/PPC.2013.6627636
