Title :
An analytical Model and New Structure of SOI High Voltage Devices with Compound Dielectric layer
Author :
Luo, Xiao-Rong ; Zhang, Bo ; Li, Zhao-Ji
Author_Institution :
Sch. of Microelectron. & Solid-State Electron., Electron. Sci. & Technol. Univ., Chengdu
Abstract :
A novel SOI high voltage device with compound dielectric buried layer (CDL SOI) and its analytical model is proposed. The vertical electric field of buried layer is enhanced due to the low k (permittivity) of dielectric layer and the electric field in the drift region is modulated by the compound dielectric layer with different k, and both increases breakdown voltage of device. The electric field distribution and potential distribution is investigated. The simulation results are in good agreement with the analytical results. It shows the electric field of buried layer and breakdown voltage of CDL SOI when low k value is 2 are enhanced by 82% and 58% comparing with conventional SOI, respectively
Keywords :
dielectric materials; permittivity; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; SOI high voltage devices; analytical model; breakdown voltage; compound dielectric buried layer; electric field distribution; permittivity; potential distribution; vertical electric field; Analytical models; Breakdown voltage; Dielectric breakdown; Dielectric devices; Medical simulation; Microelectronics; Neodymium; Poisson equations; Power integrated circuits; Solid state circuits;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306186
