Channel resistance method for parameter extraction of ultra-thin gate oxide LDD MOSFET´s

An improved differential extraction method is proposed by intentionally splitting the close interdependence between the parasitic series resistance R_ds and the channel length reduction DeltaL. Compared with traditional differential method, the improved one eliminates the overestimation of the bias-dependence of R_ds and DeltaL especially at high gate bias, gives meaningful extractions in whole the gate overdrive V_gt range. The method is suitable for ultrathin gate oxide MOSFETs with significant gate leakage current