• DocumentCode
    3469764
  • Title

    Channel resistance method for parameter extraction of ultra-thin gate oxide LDD MOSFET´s

  • Author

    Yang, Lin-An ; Yu, Chun-Li ; Hao, Yue

  • Author_Institution
    Microelectron. Inst., Xidian Univ., Xi´´an
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    1373
  • Lastpage
    1375
  • Abstract
    An improved differential extraction method is proposed by intentionally splitting the close interdependence between the parasitic series resistance Rds and the channel length reduction DeltaL. Compared with traditional differential method, the improved one eliminates the overestimation of the bias-dependence of Rds and DeltaL especially at high gate bias, gives meaningful extractions in whole the gate overdrive Vgt range. The method is suitable for ultrathin gate oxide MOSFETs with significant gate leakage current
  • Keywords
    MOSFET; leakage currents; channel length reduction; channel resistance method; differential extraction method; gate leakage current; parameter extraction; parasitic series resistance; ultrathin gate oxide LDD MOSFET; CMOS technology; Capacitance; Current measurement; Intrusion detection; Leakage current; MOS devices; MOSFETs; Microelectronics; Nanoscale devices; Parameter extraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306187
  • Filename
    4098413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3469764