• DocumentCode
    3469822
  • Title

    Electric facility design through the virtual fab simulator

  • Author

    Ono, Shintaro ; Nakata, Ryohei ; Nishiki, Kazuhiro ; Masuda, T. ; Ikeda, Yasuhiro

  • Author_Institution
    Toshiba Corp., Yokkaichi, Japan
  • fYear
    2013
  • fDate
    6-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The semiconductor fab expends huge amounts of N2, de-ionized water (DIW), electricity and the like. Although the utility facility of the conventional semiconductor fab was designed to use the coefficient drawn from the past empirical rules, tool and manufacturing production was continuously updated. Difference between the coefficient and the actual manufacturing production lead to a problem that prediction was not so accurate. Then, the virtual fab simulation method which can predict the amount of utilities of semiconductor fab with accuracy was developed. Since an utility facility scale can be optimized by using this method, investment cost can be reduced. Moreover, Wasteful utility can be founded by analyzing the data used for the simulation. Simulation method of N21) and DIW2) have already been reported. This time, since the simulation method of electric power was developed, it reports.
  • Keywords
    CAD; costing; investment; semiconductor industry; virtual manufacturing; de-ionized water; electric facility design; electric power method; investment cost; manufacturing production; semiconductor fab; virtual fab simulation method; virtual fab simulator; Electricity; electric power; electrical system; power transformer; simulation; utility;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    e-Manufacturing & Design Collaboration Symposium (eMDC), 2013
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/eMDC.2013.6756050
  • Filename
    6756050