Title :
Design with fluctuations of device characteristics - TCAD can be of any help?
Author_Institution :
Kinki Univ. Tech. Coll., Kumano
Abstract :
With the miniaturization of devices, fluctuations of device characteristics have become a major problem for design for manufacturability (DFM). In this paper, origins of device fluctuations are explained in detail. Fluctuations are basically classified in three categories, wafer-to-wafer, across-the-wafer and within-a-chip fluctuations. Some fluctuations are inevitable by nature, and will far apart from the requirement of ITRS semiconductor roadmap. TCAD was effectively used to understand these fluctuations. Two proposals regarding the usage of TCAD are made for LSI designers
Keywords :
design for manufacture; integrated circuit design; large scale integration; technology CAD (electronics); ITRS semiconductor roadmap; LSI; TCAD; across-the-wafer fluctuation; design for manufacturability; device fluctuations; wafer-to-wafer fluctuation; within-a-chip fluctuation; Chemical vapor deposition; Design engineering; Design for manufacture; Electric variables; Fabrication; Fluctuations; Furnaces; Large scale integration; Proposals; Semiconductor device manufacture;
Conference_Titel :
ASIC, 2005. ASICON 2005. 6th International Conference On
Conference_Location :
Shanghai
Print_ISBN :
0-7803-9210-8
DOI :
10.1109/ICASIC.2005.1611436
