DocumentCode :
3469929
Title :
Effective Channel Mobility of Poly-Silicon Thin Film Transistors
Author :
Wang, Mingxiang ; Wong, Man ; Shi, Xuejie ; Zhang, Dongli
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou
fYear :
2006
fDate :
Oct. 2006
Firstpage :
1395
Lastpage :
1397
Abstract :
Effective channel mobilities of polycrystalline silicon (poly-Si) thin film transistors (TFTs) have been experimentally extracted by drain conductance and channel charge measured at linear region. It is demonstrated that conventionally followed device field effect mobility is largely deviated from effective channel mobility. Based on a mobility model including both barrier controlled carrier conduction and effective transverse field controlled mobility degradation, our experimental channel mobility data can be reproduced for both low temperature and high temperature recrystallized poly-Si TFTs, without introducing any empirical or artificial factors
Keywords :
carrier mobility; elemental semiconductors; semiconductor device models; silicon; thin film transistors; Si; barrier controlled carrier conduction; effective channel mobility; effective transverse field controlled mobility degradation; field effect mobility; mobility model; polycrystalline silicon; thin film transistors; Channel bank filters; Charge measurement; Current measurement; Data mining; Degradation; Iron; MOSFETs; Silicon; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306194
Filename :
4098420
Link To Document :
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