Analysis of Self-Heating in Poly-Si Thin-Film Transistors and Circuits by a Self-Consistent Electro-Thermal Simulation Approach

Author

Guo, Xiaojun ; Silva, S.R.P.

Author_Institution

Adv. Technol. Inst., Surrey Univ., Guildford

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1398

Lastpage

1400

Abstract

This paper investigated the self-heating effects in poly-Si thin-film transistors (TFTs) and circuit(s) by using a self-consistent electro-thermal simulation approach. The analysis indicates that, for the poly-Si technology, self-heating may lead to a significant degradation of the device´s characteristics, and severely impact the circuit performance; therefore, reinforce the need for effective cooling strategies and also accurate device/circuit level models, including electro-thermal coupling effects, for reliable poly-Si TFT circuit design and integration

Keywords

elemental semiconductors; semiconductor device models; silicon; thermal analysis; thin film circuits; thin film transistors; Si; circuit level models; circuit performance; device characteristics; device level models; effective cooling strategies; electro-thermal coupling effects; self-consistent electro-thermal simulation; self-heating effects; thin-film circuits; thin-film transistors; Analytical models; Circuit optimization; Circuit simulation; Circuit synthesis; Cooling; Coupling circuits; Degradation; Integrated circuit reliability; Performance analysis; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306195

Filename

4098421