Title :
Simulation on Advanced Shallow Junction Technology with Atomistic Method
Author :
Yu, Min ; Yuan, Li ; Sui, Yi ; Zhan, Kai ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Oka, Hideki
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
New technologies such as cluster or molecular ion implantation and flash lamp annealing (FLA) seem to be applied as advanced shallow junction technologies. In this paper, the molecular dynamics (MD) model based simulation on B10H14 and B18H22 implantation is performed. The spike annealing of cluster implantation is simulated by atomistic model. The inactivation and clustering of B implanted at 0.5 keV and annealed at 900degC-1200degC are correctly simulated by atomistic model. The simulation on activation ratio of B in FLA is presented. The discussion on cluster evolution in annealing is performed
Keywords :
annealing; boron compounds; integrated circuit manufacture; ion implantation; molecular dynamics method; 0.5 keV; 900 to 1200 C; B10H14; B18H22; atomistic method; flash lamp annealing; molecular dynamics; molecular ion implantation; shallow junction technology; spike annealing; Boron; Circuit simulation; Computational modeling; Integrated circuit technology; Ion implantation; Kinetic energy; Microelectronics; Rapid thermal annealing; Simulated annealing; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306202
