DocumentCode
3470088
Title
New metal fill considerations for nanometer technologies
Author
Dong, Xiaopeng ; Seo, Inhwan ; Kao, William
Author_Institution
IC Digital R&D, Cadence Design Syst. Inc., San Jose, CA
Volume
2
fYear
2005
fDate
24-0 Oct. 2005
Firstpage
802
Lastpage
805
Abstract
The use of metal fill insertion to create a uniform interconnect layout pattern that minimizes topographical variation is a widely adopted practice for nanometer technologies. This paper presents new advances and considerations to achieve maximum metal density uniformity while minimizing impact on chip timing by using timing aware methods. It also describes a full comprehensive metal fill methodology which includes metal fill insertion, metal fill trimming and metal density verification. Finally some new customer requested features such as staggered pattern metal fill and power strapping are also described
Keywords
filler metals; integrated circuit interconnections; integrated circuit layout; nanotechnology; chip timing; interconnect layout pattern; metal density uniformity; metal density verification; metal fill insertion; metal fill trimming; nanometer technologies; timing aware methods; Delay; Digital integrated circuits; Integrated circuit layout; Manufacturing; Parasitic capacitance; Research and development; Rivers; Shape; Timing; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2005. ASICON 2005. 6th International Conference On
Conference_Location
Shanghai
Print_ISBN
0-7803-9210-8
Type
conf
DOI
10.1109/ICASIC.2005.1611449
Filename
1611449
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