• DocumentCode
    3470088
  • Title

    New metal fill considerations for nanometer technologies

  • Author

    Dong, Xiaopeng ; Seo, Inhwan ; Kao, William

  • Author_Institution
    IC Digital R&D, Cadence Design Syst. Inc., San Jose, CA
  • Volume
    2
  • fYear
    2005
  • fDate
    24-0 Oct. 2005
  • Firstpage
    802
  • Lastpage
    805
  • Abstract
    The use of metal fill insertion to create a uniform interconnect layout pattern that minimizes topographical variation is a widely adopted practice for nanometer technologies. This paper presents new advances and considerations to achieve maximum metal density uniformity while minimizing impact on chip timing by using timing aware methods. It also describes a full comprehensive metal fill methodology which includes metal fill insertion, metal fill trimming and metal density verification. Finally some new customer requested features such as staggered pattern metal fill and power strapping are also described
  • Keywords
    filler metals; integrated circuit interconnections; integrated circuit layout; nanotechnology; chip timing; interconnect layout pattern; metal density uniformity; metal density verification; metal fill insertion; metal fill trimming; nanometer technologies; timing aware methods; Delay; Digital integrated circuits; Integrated circuit layout; Manufacturing; Parasitic capacitance; Research and development; Rivers; Shape; Timing; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2005. ASICON 2005. 6th International Conference On
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-9210-8
  • Type

    conf

  • DOI
    10.1109/ICASIC.2005.1611449
  • Filename
    1611449