Title :
Numerical Analysis of Barrier Layer Effect on Copper Electromigration
Author :
Zhu, Lin ; Liu, Hong-xia
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an
Abstract :
A modified model for electromigration transport considering the barrier layer effect is developed, based on the one-dimensional continuum model. Electromigration lifetime under the direct current (DC) and pulsed DC stress is analyzed numerically. The simulation results demonstrate that the barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under DC stress is higher than that under the pulsed DC stress
Keywords :
boundary-value problems; copper; diffusion barriers; electromigration; integrated circuit interconnections; 1D continuum model; Cu; barrier layer effect; copper diffusion; electromigration lifetime; electromigration transport; modified model; numerical analysis; pulsed DC stress; Continuing education; Copper; Electromigration; Equations; Microelectronics; Numerical analysis; Numerical simulation; Semiconductor materials; Stress; Wide band gap semiconductors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306231
