Title :
42 GHz static frequency divider in a Si/SiGe bipolar technology
Author :
Wurzer, M. ; Meister, T.F. ; Schafer, I. ; Knapp, H. ; Bock, J. ; Stengl, R. ; Aufinger, K. ; Franosch, M. ; Rest, M. ; Moller, M. ; Rein, H.-M. ; Felder, A.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
Frequency dividers are key components for multi-gigabit-per-second optical fiber links. For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For AlInAs/GaInAs HBTs with 130 GHz f/sub T/, 39.5 GHz operation is measured, and for 0.1 /spl mu/m InAlAs/InGaAs HEMTs with f/sub T/ of approximately 200 GHz an operating speed of 40.4 GHz is recently reported. The fastest published static silicon divider operates up to 35 GHz. Silicon bipolar technologies offer high reliability and cost-effectiveness. This divider is fabricated in a 0.5 /spl mu/m double-polysilicon self-aligned Si/SiGe heterojunction bipolar technology.
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; frequency dividers; silicon; 0.5 micron; 42 GHz; Si-SiGe; double-polysilicon self-aligned Si/SiGe heterojunction bipolar technology; high-speed IC; optical fiber link; static frequency divider; Energy consumption; Frequency conversion; Gain measurement; Germanium silicon alloys; III-V semiconductor materials; Indium compounds; Optical fibers; Optical frequency conversion; Silicon germanium; Velocity measurement;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585293
