DocumentCode :
3470314
Title :
Hydrogen-implanted 1.3 /spl mu/m vertical-cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AIAs mirrors
Author :
Qian, Yi ; Zhu, Z.H. ; Lo, Y.H. ; Huffaker, D.L. ; Deppe, Dennis G. ; Hou, H.Q. ; Hammons, B.E. ; Lin, Weisi ; Tu, Y.K.
Author_Institution :
School of Electrical Engineering, Cornell University
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
288
Lastpage :
288
Keywords :
Dielectrics; Gallium arsenide; Indium phosphide; Mirrors; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.603155
Filename :
603155
Link To Document :
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